| 摘要 |
PURPOSE:To reduce the number of wiring of a semiconductor memory and make the semiconductor memory highly integrated one by newly constituting the memory cell of electric current sensing system of a dynamic RAM to increase number of transistors at one memory cell by one, and to reduce the number of wiring by one. CONSTITUTION:The electric potential of all bit lines 32, word lines 33, and data lines 34 are set at 0V and the electric potential of a bis line 32 and word line connected to a cell to be selected is made high. When 0V or a high electric potential is impressed upon the data line 34 under this condition, a node A obtains a 0V or a high voltage. When the voltage of the selected bit line 32 and word line 33 is reduced to the original 0V, the node A is cut off from other nodes and fixed at the 0V or high electric potential to maintain this condition and to write data. Reading operation fixes the voltage of the bit lines, data lines, and word lines at 0V and the bit line 32 and word line 33 of a selected cell 31 obtain the high voltage. |
