| 摘要 |
PURPOSE:To prevent the lowering of yield on the formation of a wiring by a forming without decreasing the degree of integration and deteriorating characteristics by providing a means through which the breakdown voltage of each diffusion region constituting a current injection type logic circuit is brought to a specific value or less. CONSTITUTION:In an I<2>L consisting of an injector 11 and a base 13 in which projecting sections 11', 13' by the same impurity are formed to an injector 1 and a base 3, forms, numbers and positions take arbitrary values only for lowering breakdown voltage in the projections 11', 13', but structure in which projections are small as much as possible and the breakdown voltage of the injector and the base can be brought to 10V or less is preferable in consideration of power efficiency by the injector and the current gains of a vertical type transistor. |
