发明名称 METHOD FOR GENERATING BIAS MAGNETIC FIELD IN MAGNETO- RESISTANCE EFFECTING ELEMENT
摘要 PURPOSE:To maintain a magneto-resistance effecting element at the most suitable bias point with less bias magnetic fields by supplying a current in opposite directions to a bias conductor and the magneto-resistance effecting element with each other. CONSTITUTION:The distance between an MR element and shielding magnetic substances 5 and 6 is set so as to satisfy a relation g1<g2 and the current IS of the MR element 1 and the current IB of a bias conductor 2 are made to flow in opposite directions with each other. The bias current IB generates a bias magnetic field A in the MR element 1. Moreover, the 1st shielding magnetic substance 5 and 2nd shielding magnetic substance 6 are magnetized so that their parts facing to a recording medium become N-pole by the currents IS and IB, respectively, and another bias magnetic field B is generated. On the contrary, the magnetic fields in the opposite direction which are formed in the shielding magnetic substance 6 by the current IS and in the shielding magnetic substance 5 by the bias current IB excerts little influences, because the distance between the location of the current and the magnetic substances is large.
申请公布号 JPS59172109(A) 申请公布日期 1984.09.28
申请号 JP19830045288 申请日期 1983.03.19
申请人 FUJITSU KK 发明人 TAKAGI HITOSHI
分类号 G11B5/39 主分类号 G11B5/39
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