| 摘要 |
PURPOSE:To enable formation of a Co-Cr vertical magnetization film having an excellent characteristics on a substrate having poor heat resistance by disposing an electrode of positive potential so as to face a vapor source and a substrate holder near the vapor source. CONSTITUTION:A looped electrode 4 having positive potential is disposed near a vapor source 10 so as to face the source 10 and a substrate holder. If the potential of the electrode 4 is set at >=500V, a Co-Cr vertical magnetization film having >=500Oe Hc is obtd. at the substrate temp. of 30 deg.C. For example, polyethylene terephthalate film having 10mum film thickness is used as a substrate 11 and Co and Cr are evaporated by and from the source 10 for an electron beam. A cylindrical can 12 as a substrate holder, a mask 13 and the source 10 are grounded, and 600V voltage is impressed on the electrode 4. High frequency electric power of 13.56MHz frequency is thrown at 3kW. The vertical magnetization film of 1,500Angstrom film thickness is formed by setting the temp. on the peripheral side face of the can 12 at 25 deg.C and the depositing rate of the Co-Cr film at 8,000Angstrom /sec. |
