| 摘要 |
PURPOSE:To increase the etching rate of an Si series material without increasing electric power to be fed from an electric power source by a method wherein a ring manufactured of polytetrafluoroethylene is provided around an etching material on a base electrode, or a porous plate manufactured of polytetrafluoroethylene is provided between the base electrode and a counter electrode. CONSTITUTION:A vacuum vessel 8, a vacuum exhaust vent 9, a treating gas supply piping 10, a base electrode 11, a counter electrode 12, a high-frequency electric power source 13 are provided, and as a porous plate 15 manufactured of polytetrafluoroethylene, a plate having holes of 8mm. diameter, the 10mm. hole pitch, 3mm. thickness is used. The material of struts 16 to support the porous plate 15 is an insulator of alumina. The struts are so set as to make the interval between the porous plate 15 and an etching material 14 (the top surface of a wafer) to be 10mm.. As a ring 17 manufactured of polytetrafluoroethylene, a ring having 101mm. of the internal diameter, 152mm. of the external diameter, 3mm. of thickness is used. |
