| 摘要 |
PURPOSE:To improve the inferiority of step coverage at the crossover parts of a first layer wiring as well as to curb the deterioration of frequency characteristic due to the increasing of resistance to wiring to the minimum by a method wherein; when the first layer wiring is formed on a semiconductor substrate, whereon an IC has been constituted, through the intermediary of an insulating layer, a second layer wiring is provided thereon through an interlayer insulating film and a multilayer wiring structure is formed; the thickness of the sublayer wiring is made thinner than that of the top layer wiring. CONSTITUTION:A first layer wiring 2 in the prescribed form is formed on a semiconductor substrate 1 through the intermediary of an insulating film 3 and a second layer wiring 4 is coated thereon while the interlayer insulating film 4 to be formed into one body with the insulating film 2 has been made to interpose at the outer circumference part of the wiring 2. At this time, the inferiority of step coverage at step parts 5 is removed by making the thickness of the wiring 4 of the top layer thicker than that of the wiring 2 of the sublayer. The matter to pay attention here is that the first layer wiring 2 is used only in the case of comparatively short wiring and the second layer wiring 4 is used in the case of wiring to necessitate a long extensional wiring, because resistance to wiring is increased by having reduced the thickness of the first layer wiring 2. |
