| 摘要 |
PURPOSE:To enable to attain high speed by eliminating reflection by a method wherein the stray capacity is reduced by changing a photo diode into a thin film. CONSTITUTION:The thin film-changed photo diode 23 is directly adhered on the end surface of an optical fiber 21. The diode 23 is a P-I-N diode and connected to an Al electrode 25. A fiber 24 is made of quarts and has the refractive index of 1.52; the refractive index of the P-I-N diode is 3.4; the refractive index of the clear electrode is 1.8, therefore reflection is extremely small. Besides, the P-I-N diode can detect photo signal of 200GHz because the stray capacity is smaller than by said diode formed on a normal Si substrate. |
