| 摘要 |
PURPOSE:To easily obtain a microscopic pattern by a method wherein, in the lithographic process utilizing a triple-layer structure consisting of organic high molecule films, provided on both sides of an intermediate film, and a resist film, a ladder type silicon coating film of low pinhole density and a high heat-resisting property is used. CONSTITUTION:A novolac positive type photoresist film 13 of approximately 1.5mum in thickness is applied on a semiconductor substrate 14, it is baked at 200 deg.C for approximately 20min, and a silicon film 12 of approximately 0.8mum in thickness is formed thereon using chlorobenzene solution of ladder type silicon of 30wt%. Then, a resist film 11 for patterning is rotary-coated on the silicon film 12, a baking process is performed for approximately 10min, and after the above has been formed into a microscopic pattern, it is transferred to the film 12 by performing a reactive sputter-etching method using the mixed gas of CF4 and He. Subsequently, a patterning is performed on the lowest layer of the film 13 by performing the same etching wherein O2 is used. Through these procedures, the film 12 is formed into a passive state substance against O2. |
