| 摘要 |
PURPOSE:To obtain the substrate for a semiconductor device whereon the generation of dislocation on an element formation region is small in number and where there is no generation of white ribbon by a method wherein, when a thick SiO2 film is going to be formed by performing a selective oxidization on an Si wafer, a compound or a mixed substance consisting of Si, O2 and N2 is used as an insulating film which will be turned to a mask. CONSTITUTION:When thick field SiO2 films 25 and 26 are formed on the circumferential part of a P type Si substrate 21 using P<+> type regions 23 and 24 for prevention of inversion as an underlaid material, an SixNyOz film of 3,000Angstrom in thickness is formed on the surface of the substrate 21 located between said regions 25 and 26. Subsequently, the unnecessitated film 22 is removed by performing an etching using an 85% H3PO4 solution, a thin gate oxide film 27 which is connected to films 25 and 26 is coated on the region where the film 22 was removed, and a gate electrode 28 is attached in the center part on the surface of the film 27. Then, an N type source region 29 and a drain region 30 are formed on both sides of the electrode 28 by performing an ion implantation using the electrode 28 as a mask, an aperture is provided on the film 27, and electrodes 31 and 32 are provided on said regions respectively. |
