| 摘要 |
PURPOSE:To enable to form donor-acceptor pairs with good controllability by forming said pairs by introducing a kind of both-property impurity. CONSTITUTION:A semiconductor 11 is an N type or P type semiconductor containing a kind of both-property impurity, and a semiconductor 12 an N type semiconductor containing a kind of both-property impurity, which semiconductors 11 and 12 form a P-N junction. Electrodes 13 are formed on the outside surfaces of these semiconductors 11 and 12. In such a semiconductor light emitting element, a kind of both-property impurity, e.g., Si is introduced into the semiconductor 11. This introduced both-property impurity has the distribution into the crystal determined from thermodynamic conditions in the layer of the semiconductor 11, thus forming the donor-acceptor pairs and then forming the N type (or P type) layer. |
