| 摘要 |
PURPOSE:To improve the dispersion of the annealing temperature due to the difference of the rise starting temperature and obtain the annealing method with good reproducibility by a method wherein, when a semiconductor substrate is subjected to heat-treatment at high temperature and for a short time by radiation of infra-red rays, a process, by which the rise starting temperature is fixed to a certain value, is added before the heat-treatment. CONSTITUTION:A temperature cycle profile is shown in the figure in which an abseissa represents time (sec) and an ordinate represents temperature ( deg.C). In this profile, 11-12 corresponds to the temperature rising process for pre-heating, 12-13 corresponds to the newly added pre-heating process, 13-14 corresponds to the temperature rising process for annealing and 14-15 corresponds to the short time annealing process. With this procedure, the rise starting temperature for annealing is fixed to the pre-heat temperature A regardless to the initial temperature at the point 11 by adding the new pre-heating process expressed by 12-13. With this constitution, dispersion of the sheet resistance values for every annealing process can be reduced within + or -3% and at the same time residual gas such as O2 contained in the atmosphere can be removed. |
