| 摘要 |
PURPOSE:In subjecting semiconductor crystal of plural layers to liquid phase epitaxial growth on a substrate crystal, to prevent cccurrence of extraordinary protrusion on the ends of grown crystal, by forming channels on the surface of the substrate, putting the ends of grown crystal in the channels. CONSTITUTION:The substrate crystal 5 is placed in the substrate holder 4, and the stripe channels 7 having 0.5-1mm. width and about 30mum depth are formed near the ends of the crystal. The solution holder 1 having the solution 3 for epitaxial growth is transferred on the substrate crystal 5 and the crystal layer is grown. This method is repeated plural times, and multi-layer liquid phase epitaxial growth with about 5mum is carried out on the substrate crystal 5. Since the end 6 of grown crystal occurs in the channels 7 with only 30mum depth in this case, occurrence of extraordinary protrusions is prevented, adhesion between a masking plate and a crystal wafer in a photomasking process, and yield of preparation process is improved. |
