| 摘要 |
PURPOSE:To enable a high-speed operation by applying an electric field in the direction parallel to the hetero junction interfaces with a voltage applied in the direction perpendicular to the hetero junction interfaces, thereby enabling a current to flow in the direction perpendicular to the hetero junction interfaces. CONSTITUTION:When a voltage is applied between electrodes 6, 7 with a voltage applied between electrodes 4, 5, an electric field is applied in the direction parallel to each hetero junction interface, causing a two-dimensional electron gas 8 and a two-dimensional positive hole gas 9 to be accelerated in the direction parallel to the hetero junction interfaces and to be heated. At this time, the means energy increases and a hot condition is provided. As a result, electrons accumulate in the conduction bands of GaSb layers 2 from the two-dimensional electron gas 8 over DELTAEc, and simultaneously positive holes accumulate in the valence bands of InAs layers 1 from the two-dimensional positive hole gas 9. As a result, the curvatures of the conduction bands and the valence bands of GaSb and InAs become small, and the InAs-GaSb superlattice transforms in phase into a semi-metal wherein a sub-band E1 of the electrons ranging over the all InAs layers 1 and GaSb layers 2 and a level HH1 of the heavy positive holes are existing. With this, a current flows between the electrodes 4, 5. |
