发明名称 PREPARATION OF SINGLE CRYSTAL OF HGCDTE
摘要 PURPOSE:To make a polycrystal of HgCdTe alloy into a single crystal in a short time easily, by resealing a HgCdTe alloy which is converted into a polycrystal in a quartz ampule in another larger ampule, heat-trating it. CONSTITUTION:polycrystals of high-purity HgTe and CdTe are put in a quartz ampule, the quartz ampule is evacuated, they are melted under heating at a temperature higher than melting points of the compositions and annealed. Since the HgCdTe alloy solidified in it is not a perfect single crystal, and it together with a small amount of Hg is put in a larger quartz ampule and resealed. It is annealed at a temperature a little lower than the solidification temperature of the alloy, so that a totally integrated single crystal of HgCdTe is prepared in an annealing time less than half of the conventional process.
申请公布号 JPS59169995(A) 申请公布日期 1984.09.26
申请号 JP19830042579 申请日期 1983.03.15
申请人 NIPPON DENKI KK 发明人 FUJINO YOSHIO
分类号 C30B29/48;C30B1/02;C30B11/00;C30B33/00 主分类号 C30B29/48
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