发明名称 Process for preparing a single oxide crystal.
摘要 A process for preparing a single oxide crystal comprising the steps of mixing to fuse raw materials for crystal growth and a flux, cooling the fused mixture slowly to grow and precipitate a single crystal, and dipping up said single crystal from the molten flux while said flux is molten. A substitution amount of the substituted element in the grown crystal can be controlled. The crystal thus obtained is of high quality with little cracks.
申请公布号 EP0119798(A1) 申请公布日期 1984.09.26
申请号 EP19840301598 申请日期 1984.03.09
申请人 NIPPON HOSO KYOKAI 发明人 TAMAKI, TAKAHIKO NHK BROADCASTING SCIENCE RESEARCH;TSUSHIMI, KUNIRO NHK BROADCASTING SCIENCE RESEARCH
分类号 C30B9/12;C30B9/00;C30B9/04;C30B9/06;C30B29/28 主分类号 C30B9/12
代理机构 代理人
主权项
地址
您可能感兴趣的专利