发明名称 |
Process for preparing a single oxide crystal. |
摘要 |
A process for preparing a single oxide crystal comprising the steps of mixing to fuse raw materials for crystal growth and a flux, cooling the fused mixture slowly to grow and precipitate a single crystal, and dipping up said single crystal from the molten flux while said flux is molten. A substitution amount of the substituted element in the grown crystal can be controlled. The crystal thus obtained is of high quality with little cracks. |
申请公布号 |
EP0119798(A1) |
申请公布日期 |
1984.09.26 |
申请号 |
EP19840301598 |
申请日期 |
1984.03.09 |
申请人 |
NIPPON HOSO KYOKAI |
发明人 |
TAMAKI, TAKAHIKO NHK BROADCASTING SCIENCE RESEARCH;TSUSHIMI, KUNIRO NHK BROADCASTING SCIENCE RESEARCH |
分类号 |
C30B9/12;C30B9/00;C30B9/04;C30B9/06;C30B29/28 |
主分类号 |
C30B9/12 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|