发明名称 |
INFRA-RED DETECTOR ELEMENTS AND THEIR MANUFACTURE |
摘要 |
An infra-red radiation detector element and its manufacture. The detector element has a mesa (31) of infra-red sensitive material, e.g. cadmium mercury telluride, with separate metal electrodes (64 and 55, see FIG. 17) formed on side-walls of the mesa (31) from a metal layer 33. This permits a significant proportion of the current flow occurring between the electrodes (64 and 55) in operation of the element to pass across the bulk of the mesa (31) between its side-walls and not adjacent its top surface where the carrier recombination velocity may be higher. The mesa (31) is formed by ion-etching using a masking layer (24) e.g. of photoresist, and this permits reproducible etching over a uniform depth and the obtaining of a topographically rough surface to which the subsequently-deposited metal layer (33) can have good adhesion. The electrodes are formed from this layer (33) by a lift-off technique using the same masking layer (24). The ion-etch definition of the mesa (31) can also be used to etch unmasked parts of a passivating layer (14) on the element surface without any significant undercutting. |
申请公布号 |
EP0007667(B1) |
申请公布日期 |
1984.09.26 |
申请号 |
EP19790200396 |
申请日期 |
1979.07.17 |
申请人 |
PHILIPS ELECTRONIC AND ASSOCIATED INDUSTRIES LIMITED;N.V. PHILIPS' GLOEILAMPENFABRIEKEN |
发明人 |
WITHERS, R. B. C/O PHILIPS ELECTRONIC AND ASS. |
分类号 |
G01J1/02;H01L21/302;H01L21/3065;H01L21/465;H01L21/467;H01L27/144;H01L31/0224;H01L31/0264;H01L31/0296;H01L31/09;H01L31/18 |
主分类号 |
G01J1/02 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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