发明名称 PRODUCTION OF FINE POWDER OF SILICON NITRIDE OF HIGH PURITY
摘要 PURPOSE:A substance containing Si and N, resulting from reaction, e.g., between silicon halide and ammonia is heat-treated to form crystalline Si3N4, which is crushed and treated with hydrogen halide to produce high-purity fine particles of Si3N4 with less impurities. CONSTITUTION:Gas-phase reaction at room temperature to 1,500 deg.C or liquid- phase reaction at -100-+200 deg.C between silicon halide such as SiCl4 and ammonia and/or a mixture of N2 and H2 gases is effected to form an amorphous substance containing Si and N. Then the substance is treated at the above-cited temperature, preferably 1,000-1,700 deg.C in a nonoxidative atmosphere of N2, H2 or NH3 to form Si3N4 containing a large amount of needle crystals. The resultant Si3N4 is crushed by physical means such as steel ball mill into a powder, preferably of less than 1mu particle sizes, then the particles are treated with hydrogen halide or hydrochloric acid such as HF to give fine particles of high- purity Si3N4.
申请公布号 JPS59169911(A) 申请公布日期 1984.09.26
申请号 JP19830040775 申请日期 1983.03.14
申请人 KOGYO GIJUTSUIN (JAPAN) 发明人 SHIGI TADASUKE;ISHII MASAJI;FURUYA TAKESHI;KURANARI YOUZOU;NAKAMURA YOSHIYUKI
分类号 C01B21/068 主分类号 C01B21/068
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