| 摘要 |
PURPOSE:To prevent a shortcircuit between the gate electrode and the cathode electrode of a high velocity thyristor by forming an escape such as a through hole or a slot having a profile slightly larger than the gate electrode on a contacting electrode plate opposed to the gate electrode. CONSTITUTION:A through hole 8 having the same shape of the profile slightly larger than the gate electrode 2 is provided at the position opposed to the gate electrode 2 of a contacting electrode plate 5. It is not necessary to form a recess on the main surface of a silicon substrate 1 and to dispose the gate electrode 2. The gate electrode 2 is not only contacted directly with the plate 5, but a projection or foreign material is not passed through the hole 8 of the plate 5. The plate 5 is mounted by utilizing the hole 8 while confirming so as to be coincident to the position of the electrode 2. |
