| 摘要 |
PURPOSE:To obtain the resist film patterned with high accuracy at etching of an organic film such as a photoresist film by preventing generation of an undercut at lower part of an SiO film forming a mask and adhesion of a foreign matter on side walls of the resist film or inside the reaction chamber. CONSTITUTION:An SiO film under a patterned first resist film is subjected to reactive ion etching to form a predetermined pattern with using said resist film as a mask by introducing CF4 gas from a gas introducing opening 6 and using it as a reactive gas. After that, the CF4 gas is stopped and a reaction chamber 4 is evacuated to 10<-4>Torr of the vacuum degree by using a vacuum pump 3. Nextly, the etching gas in which O2 gas and CO2 gas are mixed in a manner CO2 gas is included by 30-70vol% of the whole is introduced into the reaction chamber from the gas introducing pipe 6. Then, high-frequency electric power of 13.45MHz is applied with output of 600W between a substrate carrying table 1 and an electrode being opposite to that and etching is carried out for 3min so as to make the pressure of the etching gas in the reaction chamber to be 0.02Torr. |
