| 摘要 |
PURPOSE:To detect the end of etching of a resist film easily by detecting variation of a light-emitting spectrum of hydrogen atom among the light emissions by the plasma generated in a reaction chamber at etching of the resist film in order to detect the end of etching. CONSTITUTION:The etching gas consisting of mixed gas of O2 gas and CO2 gas is introduced into a reaction chamber 1 from a gas introducing inlet 6. Nextly, high frequency electrical power is applied between a substrate carrying table 2 and an electrode. Consequently, the introduced etching gas becomes plasma- state in the reaction chamber 1 and emits the light. This emitted light is lead to a diffraction grating 8. The introduced light is divided into the lights various wave lengths and these divided lights are introduced into a light-detecting element 9 to convert the light signals into the electrical signals. The intensity of emission of hydrogen atoms is detected by the magnitude of said electrical signal. Since hydrogen atoms decrease when the resist film is removed and the reaction completes, the time when the hydrogen atoms decrease is detected as the time when the emission intensity of the hydrogen atoms decrease, thereby detecting the end of etching. |
