发明名称 |
Process for producing dielectrically isolated single crystal silicon devices |
摘要 |
Well-oriented device quality silicon is formed on a dielectric material through a specific melting procedure. In this procedure, a body including polycrystalline or amorphous silicon overlying a dielectric is heated to a temperature close to the melting point of silicon. A narrow region of the amorphous or polycrystalline silicon whose length is substantially longer than its width is then melted using an energy source such as a laser. This long, narrow region is propagated through the amorphous or polycrystalline silicon to produce the desired device quality material.
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申请公布号 |
US4473433(A) |
申请公布日期 |
1984.09.25 |
申请号 |
US19820389871 |
申请日期 |
1982.06.18 |
申请人 |
AT&T BELL LABORATORIES |
发明人 |
BOSCH, MARTIN A.;LEMONS, ROSS A. |
分类号 |
C30B13/00;C30B13/24;H01L21/20;(IPC1-7):C30B1/08 |
主分类号 |
C30B13/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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