| 摘要 |
A solid state transmission gate having a low "on" resistance utilizes capacitive devices for partially compensating parasitic capacitance effects, a P-channel device and an N-channel device with a switched tub or substrate to compensate for parasitic capacitance effects. When the transmission gate is conducting, the tub or substrate of the N-channel device is switched from one of its current electrodes to a reference potential such as ground. Before the transmission gate is opened electrically, a settling time is provided to allow charge which is coupled from parasitic capacitance to settle.
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