| 摘要 |
PURPOSE:To enable the good heating of the whole surface of the wafer with uniform temperature as well as to prevent overheat of the part not-requiring heating by providing a film on a surface of the wafer thereby uniformizing the reflectivity, after which the wafer is irradiated with flashing light to be heated. CONSTITUTION:A film 7 consisting of silicon oxide of about 0.2mum thick is formed over the whole surface of a wafer 6. Next, the wafer 6 covered with the film 7 is held at a wafer holding part of a sample table 5 in a heating oven and is heated preliminarily by a heater of the sample table 5 prior to irradiation with the flashing light. When the temperature of the wafer 6 reaches about 350 deg.C, it is heated by the irradiation with the flashing light over the whole surface by a light source S of the flashing light plane. With respect to this flashing light irradiation, it is a logical background that the reflectivity of a surface of the region requiring heating of the wafer 6 becomes about 0.31 whereas that of the region not-requiring heating is about 0.31. Accordingly, the reflectivity of a surface of the wafer 6 becomes about 0.31 uniformly over the whole surface, resulting in the reached temperature of the wafer 6 being uniform over the whole.
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