| 摘要 |
PURPOSE:To prevent the disconnection of wirings in a through hole by accelerating the etching velocity of an insulating film of upper layer faster than that of an insulating film of lower layer, and etching the film, thereby eliminating an ultrafine groove in a hole. CONSTITUTION:An oxidized silicon film 14 is formed as the first insulating film between aluminum wiring patterns 13, a nitrided silicon film 15 is formed as the second insulating film, and an oxidized silicon film 16 is formed as the third insulating film. With photoresist 17 as a mask it is etched under the etching velocity of the film 16 faster than that of the film 15 until the surface of the film 15 is exposed by a reactive ion etching method, and the film 15 is etched under the condition faster than the film 14. Then, a fine and deep groove is not produced in the hole. The resist 17 is removed, and aluminum wiring pattern 18 is formed. The coating property in the hole is very good, and the disconnection does not occur, and the reliability of the element can be improved. |
