| 摘要 |
PURPOSE:To improve the higher carrier mobility by implanting an impurity such as arsenic (As) to both side faces of a buried layer made of an epitaxial growth part of a high mobility substance grown on a channel region, thereby weakening the potential barrier. CONSTITUTION:An epitaxial growth part of a high mobility substance is buried and selectively grown in the channel region 4 between the source region 2 and the drain region 3 of a silicon substrate 1, etched so that the gate electrode 5 on the region 4 is shorter than the channel region, with the etched gate electrode 5 as a mask an impurity ions of As, Se or S are implanted in a self-aligning manner to the both side faces of the buried part. Since an impurity implantation region 8 is formed on the both sides across the boundary region of the substrate 1 and the epitaxial growth part of the region 4, the effect of the potential barrier in the boundary region can be reduced. |
