| 摘要 |
PURPOSE:To remove the deformation of a pattern due to the adhesion of dust, and to improve the accuracy of the pattern by mounting a sample base turning a plurality of wafers to an upper section. CONSTITUTION:A gas introducing pipe 3 is connected to the central section of a cylindrical chamber 1 through a circular electrode 2, a sample base 4 with a wafer holder is disposed to the circular electrode 2 in the chamber, and air is discharged by an exhaust pipe 5 at the upper section of the sample base. Dust does not drop and adhere to a wafer 6 and the deformation of a pattern is prevented by turning the sample base 4 and etching the wafer on etching. According to the method, the quantity of dust is made smaller than conventional structure by half or less, and the deformation of the pattern due to dust can be reduced. |
