发明名称 VOLTAGE SENSING CIRCUIT
摘要 PURPOSE:To enlarge the width of change of an output voltage by providing four MOS transistors and connecting a gate input of the third and fourth MOS transistors to a common connecting end of the first and third MOS transistors. CONSTITUTION:The titled circuit consists of P channel type MOS transistors Q13, Q14 that set data lines L29, L21 as a gate input and N channel type MOS transistors Q15, Q16 connected between drains of transistors Q13, Q14 and the earth. A gate input of the transistors Q15, Q16 is connected to a common connecting end of the transistors Q13, Q15 and the transistors Q13, Q14 are connected to a power source terminal. In such a voltage sensing circuit, by using depletion type MOS transistors for the transistors Q13, Q14 minute potential difference generated between the L29, L21 can be amplified and a largely oscillating logical output can be taken out.
申请公布号 JPS59168990(A) 申请公布日期 1984.09.22
申请号 JP19830043467 申请日期 1983.03.16
申请人 NIPPON DENKI KK 发明人 YOSHIDA OSAMU
分类号 G11C11/419;G11C11/34 主分类号 G11C11/419
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