| 摘要 |
PURPOSE:To reduce the area of a chip, and to utilize the automatic mask- alignment function of a reducing projection exposing device by forming a reference pattern for subsequent mask alignment by a mask alignment process using the reducing projecting exposing device first and aligning all masks with the reference pattern. CONSTITUTION:Masks are aligned by using a reducing projecting exposing device in five processes of a field oxide film forming process, a first gate forming process, a second gate forming process, a contact pattern forming process and an aluminum wiring forming process. When a pattern for mask alignment shown in the figure is used, only the pattern for mask alignment formed in the field oxide film forming process is employed, masks are aligned in each subsequent process and a FAMOS of 128 kilobit is manufactured, no problem is generated on characteristics. |
