发明名称 SWAP GATE OF ION IMPLANTATION BUBBLE DEVICE
摘要 PURPOSE:To make a current low and to prevent adverse influences on adjoining bubbles by providing the first and second patterns that deliver the bubble between a major line and a minor loop. CONSTITUTION:The first insular pattern 14 and the second insular pattern 15 are provided between the major line 12 and minor loop 13. The section from (a) part of the major line to the major line 12 through (b) part of the first insular pattern 14, (e) part of the minor loop 13 and the second insular pattern 15 is connected by a conductor pattern 16. Thus, by providing insular patterns, it becomes unnecessary to put a new bubble at once in empty bit of bubble derived from the minor loop. Accordingly, the design of the conductor pattern becomes easy and adverse influences on adjoining bubbles can be prevented.
申请公布号 JPS59168989(A) 申请公布日期 1984.09.22
申请号 JP19830043199 申请日期 1983.03.17
申请人 FUJITSU KK 发明人 SATOU YOSHIO;MIYASHITA TSUTOMU;OOHASHI MAKOTO;BETSUI KEIICHI;MATSUDA KAZUO
分类号 G11C11/14 主分类号 G11C11/14
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