| 摘要 |
PURPOSE:To obtain a semiconductor memory device having small number of terminals by converting an address and data inputted serially from the outside to parallel and transmitting the data to the inside and converting the data read out parallelly from the inside to serial and outputting to the outside. CONSTITUTION:An input shift register 201 consists of a shift register of 11-bit that converts an address input to parallel and a shift register of 8-bit that converts a data input to parallel. An output shift register 202 converts a data read out to 8-bit parallelly to a serial output and outputs the data serially from a data output terminal 205 synchronizing with a clock signal 207. Thus, a semiconductor memory device can be made with small number of terminals and the lowering of mounting density can be prevented. |
