| 摘要 |
PURPOSE:To increase remarkably the active regions of a memory cell array, and to prevent a semiconductor memory from disconnection of metal wirings to enhance manufacturing yield, and moreover to enable to form a pattern in a fine type by a method wherein the memory is made to have the construction removed with a field oxide film. CONSTITUTION:A first layer gate insulating film G1 is formed on a semiconductor substrate M, and first layer gates C1, C2... are formed in the lengthwise direction at the top layer thereof. Moreover, a second gate insulating film G2 is formed as to cover the gate insulating film G1 and the gates C1, C2... thereof, and second layer gates R1, R2... to form a solid crossing with the gates C1, C2... are formed at the top layer thereof. The parts not covered with the first layer and the second layer gates are in the conducting condition, and moreover out of the parts covered with the gates of any one side, the parts of the gates C3, R1, R3 in an H level are in the conducting condition, while the part of the gate R2 in an L level is in the unconducting condition. Conduction and unconduction of a region covered with both the gate layers are controlled according to written informations thereof, and ''1'', ''0'' of the written informations of a cell C3, R2 can be read according to existence of conduction between the region S0, D3 and the region S3, D3, for example. |
