| 摘要 |
PURPOSE:To obtain the same effect with arbitrary change of the condition of ion implantation by combining a material that gives compressive stress and a material that exerts tensile stress and sticking on a thin magnetic film for bubble. CONSTITUTION:When an SiO2 film 8 is stuck on the thin magnetic film for bubble 2, tensile stress is generated as shown by the arrow 10 and convex upward distortion is shown. When PLOS resin 9 is stuck on the thin magnetic film for bubble 2, compressive stress is generated as shown by the arrow 11 and concave upward distortion is shown. Accordingly, when thick SiO2 layers 8 and thin PLOS layers 9 are laminated successively, or thin PLOS layers 9' and thick SiO2 layers 8' are laminated successively, SiO2 gives layer influence in both cases, and tension is given to an ion implantation layer 4 and reduces distortion. By combining materials of different strain characteristics represented by SiO2 and a PLOS resin and sticking them, optional strain can be given and changing of conditions of ion implantation becomes possible. |
