摘要 |
PURPOSE:To obtain a magnetic bubble memory device low in error rate and high in reliability by designating a minor loop as a defective minor loop when two adjacent minor loops are defective minor loops. CONSTITUTION:For minor loops 1-(n-1), n, (n+1)-m, those marked O are designated as normal minor loops, and those marked X are designated as defective minor loops. In this way of designating defective minor loops, besides minor loops (n-1) and (n+1), checked out by examination, a minor loop n between them is also designated as a defective minor loop. By such a way of designating minor loops, minor loops having the possibility of becoming high in error rate are skipped as defective minor loops and not used. Thus, error rate of the device beocomes low and reliability becomes high. |