| 摘要 |
The invention relates to the production of a metallic spatial structure, at least one dimension of which is less than a micron. The structure has a base 10, less than a micron in width, and of small height (< 1 mu ). To reduce its electrical resistance, this base 10 is surmounted by a thick metallic layer 11 several microns (3 to 5) in width. According to the method, an opening 9 of submicronic width in a first thin mask 2 is filled with metal: the metallisation is continued until a thick metallic layer 11 is obtained on the free surface of the first mask 2. A second mask 12 delimits the portion to be preserved in the thick metallic layer 11: the latter is "cut away" by chemical or physical attack. During removal of the two masks 2, 12, the portion of the first mask 2 between the metallic layer 11 and the support 1 of the structure can be preserved as a foundation. Two pillars 16 at the ends of the structure stabilise it. Application to the production of submicronic Schottky gates for microwave frequency field-effect transistors. <IMAGE>
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