| 摘要 |
PURPOSE:To obtain a large single-crystal growth long area without taking much care of the method of recrystallization by selecting an angle of a main surface and an orientation flat of a semiconductor wafer. CONSTITUTION:The surface of an orientation flat 2 of an Si wafer 9 is formed perpendicular to (100) axis and the main surface is formed perpendicular to (001) axis. One side of a mask for photoengraving process is arranged to the orientation flat 2 of the wafer 9 so as to all elements formed on the main surface are positioned in parallel or vertical to (100) axis. With this method, the crystal in an Si-on-Insulator (S-O-I) is made grow easily to the direction of (100) axis. Therefore, when a single-crystal is made grow through an aperture made in an insulation film to make S-O-I using this wafer 9, a large single-crystal growth long area can be obtained without taking much care of the method of recrystallization. |
