| 摘要 |
PURPOSE:To largely reduce the manufacturing process and unnecessitate a driving blocking diode by a method wherein an intrinsic and a doped photoconductive thin layer made of amorphous Si are adhered on an insulation substrate, and ITO comb clear electrode layers are provided thereon in opposition to each other. CONSTITUTION:The doped layer 13 and the intrinsic layer 14 both made of amorphous Si layer are laminated and deposited on the insulation substrate 12 of glass, ceramic, etc; the comb clear electrode layers 15a and 15b made of ITO are formed thereon while being entangled with each other, thus being made as a photoconductive element 16. Thus constructed, a voltage is impressed between the electrodes 15a and 15b, and at the same time this part is irradiated with light. Now, at the time of no irradiation with light, the relation between the impressed voltage and a photocurrent becomes of the form shown by the curve 17a, which then transfers to the curves 17b and 17c as photo brightness increases, thus coming to show photosensitivity. Therefore, the titled device can be regarded as a resistance varied element in equivalent manner, and the blocking diode is unnecessitated. |
