Integrated semiconductor circuit comprising bipolar down-diffused and up-diffused transistors, and process for producing it

摘要

In an integrated semiconductor circuit comprising bipolar down-diffused and up-diffused transistors (for example T4, T1) in a semiconductor body, at least one common buried layer zone (71), which forms collectors of the down-diffused transistors or emitters of the up-diffused transistors, is provided for down-diffused and up-diffused transistors (for example T4, T1) (Figure 2). <IMAGE>