| 摘要 |
PURPOSE:To obtain a linear integrated circuit with less noise by a method wherein an N type layer and a P type layer are laminated and epitaxially grown on a P type semiconductor substrate, the N type layer is separated into two island regions by means of a P type isolation region, the P type layer is left only in one of them, and one island region is used for a bipolar element, and the other for a J-FET element, respectively. CONSTITUTION:The n type layer 2 and the p<-> type layer 11 are laminated and epitaxially grown on the p type Si substrate 1, and the layer 11 is selectively etched and thus left, as a layer 12, on the layer 2. Next, the layer 2 is divided into a layer having said region 12 and a layer not having by means of the p type isolation region 3 coming into the substrate 1. Thereafter, a p type base region 6 and an n<+> type emitter region therein are formed in the layer 2 without the existence of the layer 12, and a p<+> type collector region 10 is provided by the side of the region 6, which are then made as bipolar type elements. Then, a p<+> type source region 13 and a p<+> type drain region 14 coming into the layer 2 and an n<+> type gate region 15 are formed on the side wall 12 by diffusion. This is made as the J-FET. |
