| 摘要 |
PURPOSE:To enlarge the margin of a write voltage preventing the beak-down and improve the characteristic of repetition by connecting a device for controlling a impressed voltage to the output side of the following device, in an MIS field effect device having a charge capturing layer in a gate insulation film. CONSTITUTION:A voltage restricting device 30 is connected to a field effect device consisting of a write power source N1, a load MIS transistor T1 having a write data input gate N2, a selector MIS transistor TY1 having a selector input gate N3, and an EPROM cell transistor TM1.1 having a decoder input gate X1.1. In other words, an EPROM cell transistor TMn.1 is parallel-connected to the device 30, and the source or drain thereof is connected to the node N6 of the transistors TY1 and TM1.1. Thus, I-V characteristics 56 and 57 before and after the write of the EPROM load device only become 58 and 58' owing to the device 30, resulting in no generation of the device breakdown caused by impressing a high voltage. |
