| 摘要 |
PURPOSE:To reduce the adverse influence given to the demensional accuracy due to proximity effect by a method wherein a drawing pattern is divided into a center pattern and an outline pattern surrounding it, and the irradiation dose of an electron beam to be given to the center pattern is made smaller than that which will be given to the outline pattern. CONSTITUTION:In the case of a pattern of 6mum in width, it is divided into the outline pattern 15 of the width of 0.6mum and the center pattern 13, and in the case of the pattern 1mum in width, it is divided into the outline pattern 16 of the width of 0.2mum and the center pattern 14. Also, an isolated pattern 17 of 0.6mum square is not divided. At this time, the optimum ratio of irradiation dose to be given to each pattern is as follows when the pattern 13 is formed by the dose of 1.0: Pattern 13 is 1.0, pattern 14 is 1.3, pattern 15 is 2.1, pattern 16 is 2.3 and pattern 17 is 2.5. According to this constitution, the stored energy which is oozed out of the drawing pattern when an electron beam is made to irradiate can be reduced to the minimum, not only the dimensional accuracy of an isolated pattern can be remarkably improved, but also an enormous effect can be obtained by performing a simple correction even when a proximity effect correction is conducted. |
