Method of integrating Si semiconductor components in monocrystalline Si semiconductor components

摘要

Monolithic or hybrid integration in discrete semiconductor switching elements made of monocrystalline silicon of further semiconductor components which control the switching behaviour of said elements is already known. The monolithic integration makes possible a cheaper manufacture as a result of fewer working steps and reduced space requirements per individual element; if the individual elements are formed adjacently on an Si wafer, serious connections are difficult to achieve or can only be achieved with high cost. In the case of hybrid integration, the individual components are mutually connected by metallic interconnections or by soldering-on or bonding the elements. The invention provides a method of integration which combines the advantages of monolithic integration and of hybrid technology. This is achieved by using amorphous, microcrystalline or polycrystalline silicon for the Si semiconductor component to be integrated and producing said semiconductor component by direct growth onto the semiconductor component composed of monocrystalline silicon. <IMAGE>