| 摘要 |
PURPOSE:To obtain an electrode wiring of high reliability by preventing the diffusion of titanium and the oxidation of titanium silicide by a method wherein an aperture is bored by adhering an oxide film on a semiconductor substrate, and, when a titanium silicide electrode wiring contacting an element region is provided thereon, a nitride film is interposed between said wiring and the oxide film. CONSTITUTION:A P type region is diffusion-formed in the N type semiconductor substrate 1, an N type region 2 is provided therein, the aperture is bored by adhering the SiO2 film 6 over the entire surface, and, when the TiSi2 electrode wiring 3 contacting the region 2 is adhered, the following process is taken. That is, the thin Si3N4 film 4 of approx. 1,000Angstrom is interposed without putting the wiring in direct contact with the film 6. Thereafter, the wiring 3 is also covered with a thin Si3N4 film 5, and a PSG film 7 is adhered thereon. Thus, the change of properties of the TiSi2 film 3 is prevented by wrapping said film 3 with the Si3N4 films 4 and 5. |
