| 摘要 |
PURPOSE:To enable to emit a laser light in an arbitrary direction by forming a grating having the shape of concentric circles or part of the concentric circles during double hetero junction on a substrate as a laser resonator, and deciding a current injection region to an arbitrary linear direction passing the central point of the grating. CONSTITUTION:An N type InP layer 45 doped with tin on an N type InP substrate 46 doped with sulfur is grown by 3mum. Then, concentric circle grating 31 is formed on the grown surface. Subsequently, an undoped In0.73Ga0.27As0.37P0.63 layer 44 is grown by 0.2mum. This layer 44 becomes a light emitting layer. Then, an InP layer 43 doped with zinc is grown by 1.5mum. Subsequently, an undoped In0.73Ga0.27As0.37P0.63 layer 42 for limiting the current injection region is grown by 0.5mum. Then, zinc is diffused at the position for forming a striped current injection region with an SiO2 mask coincident to the emitting direction, thereby forming a current injection region 33. Then, after the SiO2 is removed by etching, Au/Cr is deposited on the surface of the substrate as an electrode 41, and Au/Ge/Ni is deposited on the back surface as an electrode 47. Thereafter, sintering is performed in N2 gas. |
