| 摘要 |
PURPOSE:To prevent the breakage of wiring in case of multi-layer wiring by forming the steps-shaped wiring by use of isotropic etching and anisotropic etching. CONSTITUTION:An SiO2 film 12, an Al/Si layer 13 and an Si3N4 film 14 are formed on an Si substrate 11. The Si3N4 film 14 is etched by CDE method using a resist pattern 15 as a mask, thereby forming an Si3N4 film pattern 16 which is smaller than the pattern 15 in size. The Al/Si layer 13 is etched by RIE method to form an Al/Si layer pattern 17. The Al/Si layer pattern 17 is etched and about a half of the film thickness of it is removed by RIE method using the pattern 16 as a mask, thereby forming a wiring 18 which is the first layer of steps-shape. When a wiring 20 as a second layer is formed through an SiO2 film 19, the film 19 can be formed smoothly. Thus it is possible to prevent breakage of the wiring 20 as the second layer caused by difference in level of the wiring 18 as the first layer. |
