| 摘要 |
PURPOSE:To perform the increase in a short gate in a preferable shape and the minimization of a series resistance between a source and a drain by applying lateral growth of selective epitaxial growth to part of an insulating film, and forming a Schottky junction gate electrode set in high accuracy. CONSTITUTION:An SiO2 film or Si3N4 film is formed as an insulating film on the surface of an N type GaAs active layer 9, an insulating film 11 remains on an N type GaAs active region 10 by a normal method, and windows for source and drain electrodes 12, 13 are opened. Then, with the opened parts as masks an N<+> type layer 14 is selectively epitaxially grown on the layer 9, and lateral growth parts 15, 16 are formed on the film 11. Then, with the end faces of the lateral growth parts 15, 16 as masks a window for the region 10 is opened by etching. Subsequently, the lateral growth end face of the selective epitaxial growth is used as a mask of self-aligning type, thereby forming a Schottky junction gate electrode metal 17. |
