LATERAL TYPE SEMICONDUCTOR DEVICE

摘要

PURPOSE:To obtain a high current amplification factor and to improve the integration of a semiconductor device by forming a high impurity buried layer formed inside a dielectric isolating insulating film near the periphery of an emitter region except a side opposed to a collector region, thereby improving a carrier transfer efficiency. CONSTITUTION:An N<+> type buried layer 12 and a dielectric isolating oxidized film 11 are projected to the side of an island 6 as compared with a conventional example so that an interval between the outer periphery of a P type emiter 2 and the inner edge of the layer 12 is substantially uniform at the three sides except the side opposed to the collector 1 of the emitter 2. Accordingly, the distance between the adjacent two sides of the side opposed to the P type collector 1 of the emitter 2 and the layer 12 is largely reduced as compared with the conventional example. As the results, the current amplification factor can be increased without losing the withstand voltage.