| 摘要 |
A new group of bulk polycrystalline materials which are capable of exhibiting, selectively, either memory switching or threshold switching. The body of the material, which can be molded into a suitable ceramic resistor configuration with ohmic electrodes and a sintered body composition, comprises as a majority proportion zinc oxide with the balance being another polycrystalline inorganic oxide such as bismuth oxide, cobalt oxide, chromium oxide, antimony oxide, praseodymium oxide, lanthanum oxide, holmium oxide and manganese oxide, or mixtures thereof. |
