| 摘要 |
<p>A SEMICONDUCTOR RAM DEVICE A static type semiconductor RAM device comprising a latch circuit at every column which detects, amplifies and temporarily memorizes a read-out signal from each of the memory cells disposed at the corresponding column and which has a large drive capacity. In the static type RAM device according to the present invention, each of the memory cells is used as an element which only holds information, and data bus lines are driven by the latch circuits having a large drive capacity, so that the slow down of the read-out speed and the decrease of reliability of read-out data of the static type RAM device having a large memory capacity is prevented.</p> |
