| 摘要 |
PURPOSE:To realize momentary exchange of raw material gas and manufacture a super-structured semiconductor device with good reproducibility by providing a rotatable support having plurality of non-horizontal loading surfaces for loading crystal substrates. CONSTITUTION:A crystal substrate 19 such as GaAs, etc. is loaded to a first loading surface 9a of support 9 and a first raw material gas is supplied from a first gas introducing pipe 6. The support 9 is rotated by a rotating shaft 7, a gas route 15a formed by the first loading surface 9a is located to the area facing to a third gas introducing port 17, and a second raw material gas is supplied. When the first and second raw material gases pass through the gas route 15a, a GaAs crystal film grows on a crystal substrate 19. After adequate period, the support 9 is quickly rotated for only 90 degrees and thereby the crystal substrate 19 is separated almost momentarily from the reaction gas. The support 9 is rotated for further 90 degrees and thereby the gas route 15a is located to the area facing to a fourth gas introducing port 18 and a third raw material gas is supplied. Accordingly, a GaAl1-xAsx crystal film grows. After the adequate period, the support 9 is rotated quickly and thereby the crystal substrate 19 is separated from the reaction gas. |
