| 摘要 |
PURPOSE:To obtain a semiconductor laser which has no deterioration of a reflecting surface even in a high output operation state, a plurality of electrodes and stable switching characteristics by differentiating the type or density or both of impurities of a light emitting region, both resonator end face vicinity regions of the light emitting region and an arbitrary region disposed between the both resonator end faces. CONSTITUTION:An N type Al0.3Ga0.7As layer 2, an N type Al0.15Ga0.85As layer 10, an Al0.05Ga0.95As layer 3, an N type Al0.4Ga0.6As layer 11 and an N type GaAs layer 5 are sequentially formed by a liquid phase crystal growing step on an N type GaAs substrate 1 having a slot at the center. Here, the N type Al0.15Ga0.85As layer 10 having larger thickness in the slot can be formed by utilizing the crystal growing velocity difference between the slot side face and the flat surface, refractive index difference based on the difference of the lateral layer thicknesses is introduced, thereby obtaining a 2-dimensional photowaveguide structure. Then, the film 12 is used as a selective diffusion mask, a P type impurity diffused region 6 of insular shape is formed by P type impurity diffusing except the arbitrary region disposed between the near region of the cleavage part to become the reflecting surface of the semiconductor layer and the reflecting surface, and ohmic electrodes 7, 8, 9 are then formed. |
